The 3101 is the world's first solid state memory device and
Intel's first product. The 3101 used Schottky barrier diode, bipolar
technology. The bipolar technology produced devices significantly faster
than competing gold diffusion processes.
The 3101 had a memory capacity of 64 bits. This was organized as 16
4-bit words. The 4 bit words were addressed with an on-board 1x16 decoder
using 4 leads.
The 3101 narrowly beat out the Intel 1101 to be Intel's first memory
chip. The 1101 was developed using a silicon gate PMOS technology. The
3101 and 1101 projects were started at the same time to determine, which
technology could be brought to market first. Although the 3101 won the
contest, the bipolar technology ultimately lost because silicon gate
technology was used in the giant commercial success, the Intel 1103
DRAM.
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